PART |
Description |
Maker |
W9825G2JB |
2M X 4 BANKS X 32BITS SDRAM
|
Winbond
|
W9864G2GH W9864G2GH-5 W9864G2GH-6 W9864G2GH-6C W98 |
512K X 4 BANKS X 32BITS SDRAM
|
Winbond
|
W9864G2IH |
512K × 4 BANKS × 32BITS SDRAM
|
Winbond
|
W9864G2GH-6I W9864G2GH-6C |
512K X 4 BANKS X 32BITS SDRAM 2M X 32 SYNCHRONOUS DRAM, 5 ns, PDSO86
|
Winbond Electronics, Corp.
|
W9864G2JH-6A W9864G2JH-6I W9864G2JH-7 W9864G2JH13 |
512K x 4 BANKS x 32BITS SDRAM 512K x 4 BANKS x 32BITS SDRAM
|
Winbond
|
HMC550 HT6740 HYB25S1G800TCL-37 HFV6 HY5V22LF-P HY |
GAAS MMIC SPST FAILSAFE SWITCH, DC - 6 GHz 13.56MHz RFID Transponder MEMORY SPECTRUM AUTOMOTIVE RELAY 4 Banks x 1M x 32Bit Synchronous DRAM 4Banks x 2M x 32bits Synchronous DRAM 3.3 VOLT HIGH-DENSITY SUPERSYNC II36-BIT FIFO
|
美国讯泰微波有限公司上海代表 Holtek Semiconductor Inc. Infineon Technologies AG 厦门宏发电声股份有限公司 Hynix Semiconductor Inc. Integrated Device Technology, Inc.
|
MT48LC16M16A2P-75DTR |
SDR SDRAM MT48LC64M4A2 ?16 Meg x 4 x 4 banks MT48LC32M8A2 ?8 Meg x 8 x 4 banks MT48LC16M16A2 ?4 Meg x 16 x 4 banks
|
Micron Technology
|
IS42VM32400F-75BLI |
1M x 32Bits x 4Banks Mobile Synchronous DRAM
|
天津新技术产业园区管理委员会 Integrated Silicon Solu...
|
RMS132AW-10E RMS132AW-6E RMS132AF-6E RMS132AF-75E |
512K x 32Bits x 2Banks Low Power Synchronous DRAM
|
Emerging Memory & Logic Solutions Inc
|
KM416S4030C KM416S4030CT-F10 KM416S4030CT-F7 KM416 |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 125MHz 1M x 16Bit x 4 Banks Synchronous DRAM 100万16 × 4银行同步DRAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
72SD3232RPFE 72SD3232RPFI 72SD3232RPFK 72SD3232RPF |
1 Gbit SDRAM 32-Meg X 32-Bit X 4-Banks 32M X 32 SYNCHRONOUS DRAM, 6 ns, DFP72 1 Gbit SDRAM 32-Meg X 32-Bit X 4-Banks 1千兆位SDRAM2梅格× 32位4,银
|
http:// Maxwell Technologies, Inc
|
HY57V281620HCST-6I HY57V281620HCST-KI HY57V281620H |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 166MHz 4 Banks x 2M x 16bits Synchronous DRAM
|
HYNIX[Hynix Semiconductor] Hynix Semiconductor Inc.
|